Product Details
Directly Integrate Diamond Thermal Layers into Semiconductor Processes
We provide contract manufacturing services for directly growing thin-film diamond on silicon (Si) and silicon carbide (SiC) substrates. Through DOSi and DOSiC technologies, we combine diamond’s exceptional thermal conductivity with existing semiconductor process platforms, enabling downstream chip manufacturers to use composite substrates with integrated diamond thermal layers, replacing conventional post-assembly thermal bonding methods.

Core Technology Capabilities
DOSi(Diamond on Silicon)
Polycrystalline diamond thin films are grown on silicon substrates, offering high compatibility with existing silicon semiconductor production lines.
DOSiC(Diamond on Silicon Carbide)
Diamond thin films are grown on silicon carbide substrates, making them particularly suitable for high-frequency, high-voltage, and high-power device applications.
Versatile CVD Growth Technologies
Depending on product requirements, we employ different deposition approaches, including MPCVD, HFCVD, and LACVD, balancing thin-film quality, growth rate, and substrate compatibility.
Low- and High-Temperature Process Options
Growth temperature conditions can be flexibly adjusted according to the substrate’s temperature resistance, reducing the impact of thermal stress on the substrate.
Applications
Our Process Capabilities
From substrate nucleation treatment and CVD thin-film growth to thickness uniformity control and quality inspection, we provide one-stop thin-film diamond contract manufacturing services. We can also customize film thickness and process parameters according to the customer’s substrate type (Si/SiC) and application requirements.
Contact us to learn more about our one-stop thin-film diamond contract manufacturing services.
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